| PART |
Description |
Maker |
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| HY57V281620ALT-H HY57V281620AT-6 HY57V281620AT-H H |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| HY5V26CLF-8I HY5V26CLF-PI HY5V26CLF-HI HY5V26CLF-S |
x16 SDRAM x16内存
|
Vishay Intertechnology, Inc.
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| IS43DR16128 IS43DR16128-3DBI IS43DR16128-3DBL IS46 |
2Gb (x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
| HYB18T512161B2F-20/25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| K4X51163PC-FECA K4X51163PC-FGCA K4X51163PC-LEC3 K4 |
32M X16 MOBILE-DDR SDRAM
|
Samsung semiconductor
|
| HYB18T512161B2F-20 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
